COBISS Kooperativni online bibliografski sistem in servisi COBISS
dr. Igor Jenčič [03590]
Reprezentativne bibliografske enote
ČLANKI IN DRUGI SESTAVNI DELI
1.01 Izvirni znanstveni članek
1.
JENČIČ, Igor, ROBERTSON, I.M., SKVARČ, Jure. Electron beam induced regrowth of ion
implantation damage in Si and Ge. Nuclear instruments & methods in physics research. Section B, Beam interactions with
materials and atoms. [Print ed.]. 1999, vol. 148, str. 345-349. ISSN 0168-583X. [COBISS.SI-ID 13921575]
2.
JENČIČ, Igor, PETERNELJ, Jože, ROBERTSON, I.M. Randomization-and-relaxation model
revisited. Radiation effects and defects in solids. 1997, vol. 142, str. 449-457. ISSN 1042-0150. [COBISS.SI-ID 12561703]
3.
JENČIČ, Igor, ROBERTSON, I. M. Low-energy electron beam induced regrowth of isolated
amorphous zones in Si and Ge. Journal of materials research. 1996, vol. 11, str. 2152-2157. ISSN 0884-2914. [COBISS.SI-ID 3889959]
4.
ROBERTSON, I.M., JENČIČ, Igor. Regrowth of amorphous regions in semiconductors by
sub-treshold electron beams. Journal of nuclear materials. [Print ed.]. 1996, vol. 239, str. 273-278. ISSN 0022-3115. [COBISS.SI-ID 3864871]
5.
JENČIČ, Igor, BENCH, M.W., ROBERTSON, I.M., KIRK, M.A. Electron-beam-induced crystallization
of isolated amorphous regions in Si, Ge, GaP, and GaAs. Journal of applied physics. 1995, vol. 78, str. 974-982. ISSN 0021-8979. [COBISS.SI-ID 8412164]
6.
JENČIČ, Igor, PETERNELJ, Jože, ROBERTSON, I.M. Modelling of amorphous zones in semiconductors
by using the randomization-and-relaxation method. Nuclear instruments & methods in physics research. Section B, Beam interactions with
materials and atoms. [Print ed.]. 1995, vol. 102, str. 202-206. ISSN 0168-583X. [COBISS.SI-ID 8411908]
7.
JENČIČ, Igor, PETERNELJ, Jože, ROBERTSON, I.M. A computer simulation of local amorphization
in III-V compounds. Journal of physics. Condensed matter. 1993, vol. 5, str. 7907-7922. ISSN 0953-8984. [COBISS.SI-ID 8411652]