dr. Dean Korošak [15413]

1. CVIKL, Bruno, KOROŠAK, Dean, HORVÁTH, Zs.J. Comparative study of I-IV characteristics of the ICB deposited Ag/n-Si(111) and Ag/p-Si(100) Schottky junctions. Vacuum. [Print ed.]. 1998, 50, št. 3/4, str. 385-393. ISSN 0042-207X. [COBISS.SI-ID 3876118]

2. HROVÁTH, Zs. J., ÁDÁM, M., PINTÉR, I., CVIKL, Bruno, KOROŠAK, Dean, MRDJEN, T., VAN TUYEN, V., MAKARÓ, Zs., DÜCSÖ, Cs., BÁRSONY, I. Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions. Vacuum. [Print ed.]. 1998, 50, št. 3/4, str. 417-419. ISSN 0042-207X. [COBISS.SI-ID 3876630]

3. CVIKL, Bruno, MRDJEN, Tomo, KOŽELJ, Matjaž, KOROŠAK, Dean. Preliminary investigation of Ag/n-Si(111) Schottky photodiode prepared by ionized-cluster-beam deposition. Fizika : a journal of experimental and theoretical physics. A, Atomic and molecular physics, condensed matter physics, plasma physics. 1995, 4, 3, str. 389-394. ISSN 1330-0008. [COBISS.SI-ID 7899396]

4. KOROŠAK, Dean, CVIKL, Bruno. Schottkyjeva bariera : moderni pogledi na star problem. 1. del = Schottky barrier - modern views on an old problem (Part I). Vakuumist : glasilo Društva za vakuumsko tehniko Slovenije. [Tiskana izd.]. 1998, let. 18, št. 2, str. 17-20. ISSN 0351-9716. http://www.dlib.si/details/URN:NBN:SI:doc-I5FZNJ1M, https://dk.um.si/IzpisGradiva.php?id=53334. [COBISS.SI-ID 13500967]

5. KOROŠAK, Dean, CVIKL, Bruno. Schottkyjeva bariera : moderni pogledi na star problem. 2. del, Transport naboja skozi stik kovina-polprevodnik. Vakuumist : glasilo Društva za vakuumsko tehniko Slovenije. [Tiskana izd.]. 1998, 18, št. 3, str. 13-16. ISSN 0351-9716. http://www.dlib.si/details/URN:NBN:SI:doc-8OIN0NUF, https://dk.um.si/IzpisGradiva.php?id=53330. [COBISS.SI-ID 4173078]

6. KOROŠAK, Dean, CVIKL, Bruno. Analysis of the temperature dependent I-V characteristics of the ICB depositedAg/Si Schottky structures. V: BREZA, Juraj (ur.). ASDAM `98 : conference proceedings. Second International conference on advanced semiconductor devices and microsystems, Smolenice Castle, 5-7 October 1998. Piscataway: Institute of Electrical and Electronics Engineers, 1998. Str. 137-140. ISBN 0-7803-4909-1. [COBISS.SI-ID 4050454]

7. CVIKL, Bruno, KOROŠAK, Dean. On capacitance of ▫$(U_a=100 V)$▫ ionized cluster beam deposited Pb/p-Si(100) Schottky junction. V: BREZA, Juraj (ur.). ASDAM `98 : conference proceedings. Second International conference on advanced semiconductor devices and microsystems, Smolenice Castle, 5-7 October 1998. Piscataway: Institute of Electrical and Electronics Engineers, 1998. Str. 125-140. ISBN 0-7803-4909-1. [COBISS.SI-ID 4049686]

8. CVIKL, Bruno, KOROŠAK, Dean, KOŽELJ, Matjaž. Evidence of interface charge density bias voltage dependence of (▫$U_a$▫=300) ionized cluster beam deposited Ag and Pb/p-Si(100) Schottky junctions. V: HROVAT, Marko (ur.), KRIŽAJ, Dejan (ur.), ŠORLI, Iztok (ur.). Proceedings. 34th International Conference on Microelectronics, Devices and Materials with the Satellite Minisymposium on Semiconductor Radiation Detectors, September 23. - 25. 1998, Rogaška Slatina, Slovenia. Ljubljana: MIDEM - Society for Microelectronics, Electronic Components and Materials, 1998. Str. 107-112. ISBN 961-90001-6-1. [COBISS.SI-ID 4027670]

9. KOROŠAK, Dean, CVIKL, Bruno, KOŽELJ, Matjaž. On the origin of a possible disorder induced charge transport in ICB Schottky structures for nonzero acceleration voltage. V: HROVAT, Marko (ur.), KRIŽAJ, Dejan (ur.), ŠORLI, Iztok (ur.). Proceedings. 34th International Conference on Microelectronics, Devices and Materials with the Satellite Minisymposium on Semiconductor Radiation Detectors, September 23. - 25. 1998, Rogaška Slatina, Slovenia. Ljubljana: MIDEM - Society for Microelectronics, Electronic Components and Materials, 1998. Str. 113-117. ISBN 961-90001-6-1. [COBISS.SI-ID 4050198]

10. KOROŠAK, Dean. Svojstva Ag/Si Schottkyjevih dioda načinjenih snopom ioniziranih nakupina atoma (SIN) : magistraski rad. Zagreb: [D. Korošak], 1998. 116 f., graf. prik. [COBISS.SI-ID 4192790]